| abstract |
In a semiconductor memory device having a three-dimensional structure, a semiconductor memory device capable of increasing a cell current is provided. According to an embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating films 111, 111a, 113 and an electrode film 112 are alternately stacked, and a memory hole provided in the thickness direction of the stacked body. And a pillar portion 121b disposed on the surface. The pillar portion 121b has a structure in which a block insulating film 133, a charge storage film 132, a tunnel insulating film 131, and a channel layer 126 are sequentially stacked from the side in contact with the stacked body. The channel layer 126 has a laminated structure including an outer channel semiconductor layer 123b, an interlayer film 124 made of an insulating material, and an inner channel semiconductor layer 123a from the tunnel insulating film 131 side. [Selection] Figure 3 |