| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7b13814be12228b7ad31a0f3a40341b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89409ef8d83a4a19fcf406df047ef3ac |
| publicationDate |
2018-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018148123-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
A semiconductor device capable of ensuring high reliability and suppressing an increase in manufacturing cost while reducing parasitic capacitance. A substrate having a buried insulating film, a semiconductor layer provided on the buried insulating film and having a semiconductor element formed thereon, and a gate electrode provided on the semiconductor layer, The gate electrode has a band-shaped first electrode portion extending from the central portion of the semiconductor layer beyond the end portion of the semiconductor layer along the first direction when the substrate is viewed from above. In the cross section when the first electrode portion and the substrate are cut along the first direction, the thickness of the end portion of the semiconductor layer is thicker than the thickness of the central portion of the semiconductor layer. A semiconductor device is provided. [Selection] Figure 1C |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022014152-A1 |
| priorityDate |
2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |