| abstract |
Provided is a storage device capable of extending data retention time. An electrical connection between a first transistor, a first wiring and a gate is controlled by the first transistor, and an electrical connection between a second wiring and a gate is the second transistor. And a third transistor controlled by the first transistor, wherein the off-state current of the first transistor is smaller than that of the third transistor, and the leakage current of the second transistor is smaller than that of the third transistor. [Selection] Figure 1 |