| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf334efdc57a817d413aef1d9f5e9d80 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-1825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2017-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4ebb4289f36fb650ede24938c5a51d8 |
| publicationDate |
2018-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018133505-A |
| titleOfInvention |
Plasma etching method |
| abstract |
An object of the present invention is to suppress the generation of bubbles between a tape and a holding surface and prevent tape burn. A plasma etching method for plasma-etching a surface to be ground of a wafer after grinding the wafer (W) having a tape (T) attached to the lower surface, and applying moisture to the tape to heat the tape. Of the electrostatic force holding step for supplying the DC power to the electrode (44) of the electrostatic chuck (4) to generate static electricity and holding the wafer electrostatic force after the drying step, and the electrostatic force holding step. And an etching step in which the reduced pressure chamber (C) is depressurized and the surface to be ground of the wafer is subjected to plasma etching with a plasma reaction gas. [Selection] Figure 2 |
| priorityDate |
2017-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |