http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018110172-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eacf98b50d4b41c9b595d46fa406bc7 |
| publicationDate | 2018-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018110172-A |
| titleOfInvention | Manufacturing method of semiconductor structure and manufacturing method of semiconductor element |
| abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor structure and a method for manufacturing a semiconductor element having excellent crystallinity by suppressing the occurrence of strain. A method for manufacturing a semiconductor structure S1 includes a decomposition layer forming step, a bridging portion forming step, an etching step, and a semiconductor layer forming step. In the decomposition layer forming step, the decomposition layer E1 is grown and a plurality of threading dislocations Q1 are extended. In the bridging part forming step, a plurality of threading dislocations Q1 are exposed on the surface of the bridging part C10. In the etching step, the plurality of threading dislocations Q1 exposed on the surface of the bridging portion C10 are widened to form a plurality of through holes C11a and C11b penetrating the bridging portion C10, and inside the plurality of through holes C11a and C11b. The exposed decomposition layer E1 is decomposed. [Selection] Figure 8 |
| priorityDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.