| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44b7564ea6673856800b83694cec4e1d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B21J13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B21D37-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B21D37-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23B27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B21J13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B21D37-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23B27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B21D37-20 |
| filingDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6953a4cc62bededc9a31dc2f9ed1a708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc61b8da0836a32b44221229f194fcec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88548846b6e8ad990fe611a64e8c6d14 |
| publicationDate |
2018-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018109233-A |
| titleOfInvention |
Vanadium oxynitride film, vanadium oxynitride film covering member and method for manufacturing the same |
| abstract |
An object of the present invention is to improve oxidation resistance while ensuring a sufficient hardness of a vanadium silicon nitride film. In a vanadium siliconitride film 4 formed as a hard coating on a substrate, a = vanadium element concentration [at%] / (vanadium element concentration [at%] + silicon element concentration [at%] + nitrogen element concentration. [At%]), b = silicon element concentration [at%] / (vanadium element concentration [at%] + silicon element concentration [at%] + nitrogen element concentration [at%])), 0.30 ≦ a /B≦1.7 and 0.24 ≦ b ≦ 0.36 are satisfied, and the hardness is 2300 HV or higher. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7304725-B2 |
| priorityDate |
2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |