| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2017-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77007015a794376887af832cf5140610
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a89e19cdb3634bdcfca0661a3d3cec89 |
| publicationDate |
2018-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018107447-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
A semiconductor device with high on-state current is provided. A first conductor disposed on a substrate, a first insulator disposed on the first conductor, and a first oxidation disposed on the first insulator. A second oxide disposed on the first oxide; a second insulator disposed on and in contact with a top surface of the second oxide; and a side surface of the second oxide; A second conductor disposed on the second insulator; a side surface of the second insulator; and a third insulator disposed in contact with the side surface of the second conductor. The film thickness of the second oxide is equal to or greater than the length of the second oxide in the channel width direction, and the second conductor is connected to the upper surface and the side surface of the second oxide via the second insulator. The carrier density on the side surface of the second oxide is larger than the carrier density on the upper surface of the second oxide. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020201873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020201870-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020229919-A1 |
| priorityDate |
2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |