| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2017-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136da8151a38d009aae89e7091642fc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_969664276c0643b24594a89561f30b32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2963d0cdaeedad4188231d5f28bfeb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d96d7202afeeb9db6a6cd462b35f0153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6877e2b348aade65bc55c6e5c7fb3fea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3d5114244bfb499307c4cca6f04f506 |
| publicationDate |
2018-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018058759-A |
| titleOfInvention |
GaN single crystals and wafers |
| abstract |
A nitride single crystal having low resistance and high mobility can be produced by a simple method even when the crystal is grown by an ammonothermal method. A nitride single crystal grown in the presence of a solvent containing nitrogen in a supercritical state and / or a subcritical state is annealed at 750 ° C. or more for 5.5 hours or more. [Selection figure] None |
| priorityDate |
2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |