| abstract |
An oxide film containing a plurality of metal elements and having high crystallinity is formed. In addition, a sputtering target capable of forming the oxide film and a method of using the sputtering target are provided. A polycrystalline oxide having a plurality of crystal grains, wherein the average grain size of the plurality of crystal grains is 3 μm. m or less sputtering target. The plurality of crystal grains have a cleavage plane. When the sputtering target has a plurality of crystal grains having an average grain size of 3 μm or less, the sputtered particles can be separated from the cleavage plane of the crystal grains when ions are collided with the sputtering target. [Selection] Figure 1 |