Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G81-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D153-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F293-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F293-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F297-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
filingDate |
2016-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3ac9adfe7a2f189726c633295825653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94bc5abc3b7576af27b914019b71d0f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5151b27af8854539b30c10d7edd10eba |
publicationDate |
2018-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2018046202-A |
titleOfInvention |
Pattern forming method, self-organizing material, and semiconductor device manufacturing method |
abstract |
A self-organizing material capable of forming a desired pattern is provided. Also provided are a pattern forming method and a semiconductor device manufacturing method that enable a desired pattern to be formed using such a self-organizing material. A pattern forming method according to the present embodiment supplies a self-organizing material including a block copolymer including a first polymer and a second polymer and a third polymer bonded to the first polymer onto an underlayer. To do. The block copolymer is phase separated to form a phase separation pattern on the underlayer. [Selection] Figure 1 |
priorityDate |
2016-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |