| abstract |
A process for depositing an antimony oxide thin film by atomic layer deposition using an antimony reactant and an oxygen source. In a reaction chamber, the substrate comprises an antimony halide, eg SbCl 3, an antimony alkylamine, and an antimony precursor that may comprise an antimony alkoxide, eg Sb (OEt) 3, and an oxygen source that may be ozone. An atomic layer deposition process for depositing antimony oxide, comprising alternating, sequential contact. The antimony oxide thin film is also deposited in a batch reactor. This antimony oxide thin film may serve as an etching stop layer or a sacrificial layer, for example. [Selection] Figure 2C |