| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04L9-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d77a6789b61b291e3d2259df0e91e49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4c9a52f1432483ca9517dad3bfbf44f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceb3569378d6dc47533f5b03e0377185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd81a23d855b5efe3cfebcb54df7528a |
| publicationDate |
2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018011076-A |
| titleOfInvention |
Optical device and method of manufacturing an optical device |
| abstract |
The performance of an optical device based on quantum dots is enhanced. A semiconductor device comprising: a substrate 401; and a cavity structure on the substrate, the quantum structure including a quantum emitter in contact with one semiconductor layer or a plurality of semiconductor layers, and the semiconductor layer in contact with the quantum emitter. An optical device wherein all of the plurality of semiconductor layers have a thickness greater than the height of the quantum emitter. [Selection] Figure 4 (a) |
| priorityDate |
2014-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |