| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2015-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017538297-A |
| titleOfInvention |
Method for manufacturing high resistivity semiconductor-on-insulator wafer with charge trapping layer |
| abstract |
A method of making a single crystal semiconductor handle wafer in the manufacture of a semiconductor-on-insulator device is provided. A single crystal semiconductor handle wafer is fabricated to include a charge trapping layer that is oxidized. The resulting buried oxide layer of the semiconductor-on-insulator device includes an oxidized portion of the charge trap layer and an oxidized portion of the single crystal semiconductor device layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495488-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020513693-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7275172-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022176701-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7160943-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021522682-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210020024-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021531645-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019239763-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7248711-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021048401-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021532570-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7275438-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7314445-B2 |
| priorityDate |
2014-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |