| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-298
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-566 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017523588-A |
| titleOfInvention |
Surface encapsulation for wafer bonding |
| abstract |
Several techniques for wafer bonding using an encapsulation layer are disclosed. A first semiconductor substrate is provided. Next, an encapsulating layer is formed on top of the first semiconductor substrate. The encapsulating layer is formed of an encapsulating material that produces a stable oxide when exposed to an oxidizing agent. The first bonding layer is formed on the top of the encapsulating layer. Next, a second semiconductor substrate is provided. The second bonding layer is formed on the second semiconductor substrate. Thereafter, the first semiconductor substrate is bonded to the second semiconductor substrate by attaching the first bonding layer to the second bonding layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020136690-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7205273-B2 |
| priorityDate |
2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |