| abstract |
A high resistivity single crystal semiconductor support structure for use in the manufacture of SOI structures is provided. The support structure includes an intermediate semiconductor layer provided between the support substrate and the buried oxide layer. The intermediate semiconductor layer has a polycrystalline structure, an amorphous structure, a nanocrystalline structure, or a single crystal structure, and includes Si 1-x Gex, Si 1-x C x , Si 1-xy Ge x Sn y , and Si 1−. xy-z includes a material selected from the group consisting of Ge x Sn y C z , Ge 1-x Sn x , Group IIIA nitride, metal oxide, and any combination thereof. |