| abstract |
In a semiconductor device using a wide band gap semiconductor material having a larger band gap than silicon, the reliability of the semiconductor device is improved by realizing a structure that relaxes the electric field strength in the vicinity of the outer end portion of the semiconductor chip. To do. A side surface of a semiconductor chip CHP1a includes a region R1 including a first corner, a region R2 including a second corner, and a region R3 sandwiched between the region R1 and the region R2. At this time, when the minimum film thickness of the high electric field sealing member MR in the region R3 is t1, and the maximum film thickness of the high electric field sealing member MR in the region R1 is t2, the relationship of t2 ≦ 1.5 × t1 Is established. [Selection] Figure 25 |