| abstract |
A semiconductor device capable of suppressing deterioration of energization is provided. A semiconductor device includes a first electrode and a second electrode, a silicon carbide layer, an n-type first silicon carbide region, an n-type first silicon carbide region, and a first silicon carbide region. A plurality of p-type second silicon carbide regions 28 provided between the first electrode and extending in the first direction, and provided between the p-type second silicon carbide region and the first electrode. A plurality of n-type third silicon carbide regions 30 electrically connected to the first electrode, in contact with the n-type first silicon carbide region, and extending in a first direction, Provided between the plurality of first conductive layers 16 provided in a cycle and electrically connected to the first electrode, and two adjacent first conductive layers among the plurality of first conductive layers. N (n = 2, 3, 4, 5) first gate electrodes 18 extending in the first direction, n first gate electrodes, and an n-type first silicon carbide region, BACKGROUND OF THE includes a plurality of first gate insulating layer 20 provided, the between 1 |