http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017215354-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-74
filingDate 2016-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f71e5ae5bc8eeb88466d48ab2f9aeafa
publicationDate 2017-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017215354-A
titleOfInvention PHOTO MASK, MANUFACTURING METHOD THEREOF, AND DEFECT CORRECTION METHOD FOR PHOTO MASK
abstract Defect correction of a photomask that uses a charged particle beam such as an electron beam, corrects a drift that can be caused by the beam, and corrects the defect with high accuracy while preventing a new defect from occurring in a mask pattern Provide a method. A transparent substrate having a first surface and a second surface opposite to the first surface, and a transparent substrate provided on the first surface of the transparent substrate to limit light transmission in the thickness direction of the transparent substrate. A method of correcting a defect in a light transmission restriction film pattern in a photomask having a light transmission restriction film pattern that forms at least one reference pattern on the light transmission restriction film pattern located around a region where the defect exists A step of correcting the defect, including a step, a step of forming a protective film covering the reference pattern on the reference pattern, and a step of correcting the defect by irradiating a defect of the light transmission limiting film pattern with a charged particle beam In FIG. 2, the irradiation of the charged particle beam onto the reference pattern and the irradiation of the charged particle beam onto the defect are alternately performed a plurality of times. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023036895-A1
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