| abstract |
An oxide sintered body capable of producing an oxide semiconductor film suitable for a patterning process and an oxide sintered body capable of producing a TFT with high mobility are provided. An In, Ga, Sn and Zn, wherein atomic ratio included in the area (A), oxide density 5.5~6.8g / cm 3 preferably 6.0 g / cm 3 or more Sintered body. Region (A) 0.40 <In / (In + Ga + Sn) <0.70, 0.05 <Ga / (In + Ga + Sn) <0.30, preferably 0.10 <Ga / (In + Ga + Sn) <0.30, 0 .20 <Sn / (In + Ga + Sn) ≦ 0.50, preferably 0.22 ≦ Sn / (In + Ga + Sn) ≦ 0.30, 0.00 ≦ Zn / (In + Ga + Sn + Zn) <0.05, preferably 0.00 ≦ Zn / (In + Ga + Sn + Zn) <0.01 [Selection] Figure 2 |