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publicationDate 2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017203216-A
titleOfInvention Method and apparatus for improving the lifetime and performance of an ion source in an ion implantation system
abstract Ion implantation using a dopant and a mixture of dopant gases to improve the lifetime and performance of the ion source in an ion implantation system. An ion implantation system and method that improves the performance and lifetime of the ion source of the ion implantation system, by using an isotope-enriched dopant material that is effective to obtain such an improvement. Or an ion implantation system and method by using dopant material and make-up gas. [Selection] Figure 1
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