Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7886f9841c03e2449d28f454ebbe1dc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-32 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F17C7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
filingDate |
2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e71f1395d9b17c1c13814b069567a73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_790c7b9d5166427bfe6a13c9091c5cd0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9cc6b11d99460fc8e7b0dee82c4f8ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_117dddef92e1b987be801324ddd50e22 |
publicationDate |
2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2017203216-A |
titleOfInvention |
Method and apparatus for improving the lifetime and performance of an ion source in an ion implantation system |
abstract |
Ion implantation using a dopant and a mixture of dopant gases to improve the lifetime and performance of the ion source in an ion implantation system. An ion implantation system and method that improves the performance and lifetime of the ion source of the ion implantation system, by using an isotope-enriched dopant material that is effective to obtain such an improvement. Or an ion implantation system and method by using dopant material and make-up gas. [Selection] Figure 1 |
priorityDate |
2010-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |