http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017201651-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_932be6885ee322e4326dd570fb59197c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dcebf5a7f7ddc3b081f70e8ce1c4097 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2016-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81b51b99413e7130ace31f353c6da75e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0af7ebecd4ae26286a0872bdd57c1fe6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83ac46c9442fc40111f38aa312326775 |
| publicationDate | 2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017201651-A |
| titleOfInvention | Manufacturing method of oxide semiconductor |
| abstract | PROBLEM TO BE SOLVED: To provide a method for producing an oxide semiconductor thin film in which variations in the quality of a thin film transistor due to an increase in free carriers are unlikely to occur. The method for producing an oxide semiconductor of the present invention is a method for producing an oxide semiconductor on the surface of a substrate by a sputtering method using a target containing In, Ga, Zn, Sn or a combination thereof. A step of forming a thin film on the surface of the substrate by atoms sputtered from the target and a step of irradiating the thin film with an active species containing oxygen radicals generated by plasma are provided, and the film forming step and the active species are provided. The irradiation step is alternately repeated a plurality of times. The sputtering time in the film forming step is preferably 0.01 seconds or more and 0.08 seconds or less each time. The active seed irradiation time in the active seed irradiation step is preferably 0.01 seconds or more and 0.08 seconds or less each time. The target may include In, Ga and Zn. [Selection diagram] Fig. 3 |
| priorityDate | 2016-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.