Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F5-02 |
filingDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94b818ea5096c3acb32e13a82e875d55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701bff7265fdc643b3c655caade1f301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def1e66f171cfd7af0ff3e3817c4e5da |
publicationDate |
2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2017174978-A |
titleOfInvention |
Impurity diffusing agent composition and method for manufacturing semiconductor substrate |
abstract |
Even if a semiconductor substrate to which an impurity diffusion component is diffused has a three-dimensional structure having nano-scale minute voids on its surface, it is uniform including the entire inner surface of the minute voids. A diffusing agent composition that can be applied to the semiconductor substrate and diffuses boron in the semiconductor substrate satisfactorily and uniformly, and a method for manufacturing a semiconductor substrate using the diffusing agent composition. A diffusing agent composition comprising an impurity diffusing component (A) and a Si compound (B) capable of generating a silanol group by hydrolysis, wherein the impurity diffusing component (A) contains boron having a specific structure. Compound is included. [Selection figure] None |
priorityDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |