http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017171552-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-10 |
| filingDate | 2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6c21996fefb7ec6f9d3bdbb3dc77023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85a0903e96e438cb4d9160d57aea179 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f87923e73717f6a8aa5822aa75111a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84b10559a0e1ae3523f866152acfbb1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_958081aba4b2eabc0710b87205d01868 |
| publicationDate | 2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017171552-A |
| titleOfInvention | Method for producing group III nitride crystal |
| abstract | A method for producing a group III nitride crystal capable of effectively removing inclusions in a growing GaN crystal is provided. A group III nitride crystal manufacturing method includes a mixed melt containing a group III metal and a flux, and a group III manufacturing process for manufacturing a group III nitride crystal on a seed crystal substrate from nitrogen. A method for manufacturing a nitride crystal, wherein a group III nitride crystal is grown on a seed crystal substrate while applying a variable magnetic field to a crystal growth region for growing the group III nitride crystal in a mixed melt in the manufacturing process. . [Selection] Figure 2 |
| priorityDate | 2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.