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filingDate 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017168685-A
titleOfInvention Method for manufacturing silicon carbide semiconductor device
abstract An object of the present invention is to provide an ohmic electrode which prevents segregation of by-products inside the ohmic electrode and has good ohmic characteristics and has no peeling. A step of depositing a metal layer made of nickel on a second main surface opposite to the epitaxial layer of an n-type silicon carbide substrate having an epitaxial layer on a first main surface; A step of forming an ohmic electrode 4 by heat treatment, a step of cleaning the surface of the ohmic electrode 4 by exposure to oxygen or argon plasma, and a step of forming a wiring metal layer 5 on the ohmic electrode 4. Including. The step of depositing the metal layer 3 is performed by a sputtering method in which the pressure of the argon atmosphere is 0.1 Pa or more and 0.5 Pa or less and the temperature of the silicon carbide substrate is 120 ° C. or more and 300 ° C. or less. [Selection] Figure 5
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