| abstract |
A novel semiconductor device is provided. A switching element, specifically a well-type potential structure, is formed by utilizing a superlattice-like structure including at least a composite in which a first region and a second region are stacked on a substrate. A transistor is manufactured. The thickness of the first region is not less than 0.5 nm and not more than 5 nm, and the thickness of the second region is not less than 0.5 nm and not more than 5 nm. The band structure can be controlled by adjusting the number of stacked layers, and can be applied to various semiconductor elements. [Selection] Figure 1 |