http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017157779-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bdefb2fd5ee90279c4b06bcc558aa58e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2016-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6422cfb38175b1fba36fbd81e06ba94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_575a046b0040061724c347636c4df84e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b79edd5da6b3e540d52a1bc5b89b5042 |
| publicationDate | 2017-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017157779-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
| abstract | A method of manufacturing a semiconductor device and a semiconductor device capable of achieving desired electrical characteristics are provided. A manufacturing method of a semiconductor device includes a semiconductor substrate made of a germanium-based material, and an N-type SD region (source / drain region) is formed on a part of the semiconductor substrate. It is a manufacturing method. The manufacturing method of the semiconductor device 1 includes a step of implanting N-type impurities into a part of the semiconductor substrate 11 and a step of implanting ions of a co-implanted element. [Selection] Figure 2 |
| priorityDate | 2016-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.