http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017152670-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 |
| filingDate | 2016-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be0be52eb1816c3bb7f475d9203f8510 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69084c3b1ce90e669eb7f887faa1fc4b |
| publicationDate | 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017152670-A |
| titleOfInvention | Dispersion for forming ion implantation mask and method for manufacturing semiconductor device |
| abstract | Disclosed is a dispersion for forming an ion implantation mask used in an ion implantation process in a semiconductor manufacturing process, and a method for manufacturing a semiconductor device using the dispersion. The ion implantation mask-forming dispersion of the present invention contains a dispersion medium, particles dispersed in the dispersion medium, and optionally a heat-resistant binder-forming component. The method of the present invention for producing a semiconductor device comprises the steps of forming a film pattern of the dispersion of the present invention on a semiconductor layer or substrate, drying and / or baking the film pattern, and an ion implantation mask. A step of forming (13), a step of implanting ions (7) into the semiconductor layer or substrate (2) through the pattern opening (12) of the mask for ion implantation, and a step of removing the mask for ion implantation. Including. [Selection] Figure 1 |
| priorityDate | 2016-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.