http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017145383-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-653 |
| filingDate | 2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_159422a1b6f56856c4a36140e350cf94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4656f165a48b05b56036ed177b29353e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c24f69ea1a5daf4416d78a81d403605 |
| publicationDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017145383-A |
| titleOfInvention | Fluorinated monomer, fluorinated polymer using the same, chemically amplified resist using the same, and pattern formation method using the same |
| abstract | A chemically amplified resist exhibiting sufficient dry etching resistance by increasing the difference in solubility between the exposed part and the unexposed part when forming a resist pattern using an organic solvent as a developer in photolithography using high energy rays. Provided. A fluorine-containing polymer comprising a repeating unit represented by the formula (1). (A is an aromatic hydrocarbon group having an alicyclic hydrocarbon group, or C5~25 of C3~25; R 2 is an acetal bond, hemiacetal bond or hemiacetal ester bond) [Selection figure] None |
| priorityDate | 2016-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 364.