| abstract |
An object of the present invention is to provide a method of manufacturing an element chip that can suppress the creeping of a conductive material during a mounting process. In a plasma processing step used in an element chip manufacturing method for manufacturing a plurality of element chips by dividing a substrate having a plurality of element regions and having an element surface covered with an insulating film, the substrate is formed in a plasma processing step. The substrate is divided into element chips 10 by being exposed to the first plasma, and the element chip 10 having the first surface 10a, the second surface 10b, and the side surface 10c is held on the carrier 6 at a distance from each other, The insulating film 4 is exposed, and these element chips 10 are exposed to the second plasma for ashing, so that the insulating film 4 is retracted to form the recess C, and then a third film for forming the protective film is formed. The depression C is covered with the protective film 12a with plasma, and the creeping of the conductive material to the side surface 10c during the mounting process is suppressed. [Selection] Figure 2 |