| abstract |
A semiconductor device capable of suppressing an increase in oxygen vacancies in an oxide semiconductor layer is provided. In addition, a semiconductor device with favorable electrical characteristics is provided. In addition, a highly reliable semiconductor device is provided. In a semiconductor device including an oxide semiconductor layer in a channel formation region, an oxide insulating film provided in contact with the lower side of the oxide semiconductor layer and a gate provided in contact with the upper side of the oxide semiconductor layer An oxygen in the oxide insulating film or the gate insulating film is supplied into the oxide semiconductor layer using the insulating film. In addition, by using conductive nitride for the metal film used for the source electrode layer and the drain electrode layer, oxygen diffusion to the metal film is suppressed. [Selection] Figure 1 |