Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_beaff8169965bd7b4d7b6e35d6701a9d |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1462 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
filingDate |
2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e006229896efaf97a78d7672a767c55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0c55c89d5ec7b0026dcaa264c9b2b37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cd6d70be158d85c69968069a7278a14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a733b9877a423c6230caf6365ba23f5 |
publicationDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2017108109-A |
titleOfInvention |
Semiconductor image sensor device and method of forming a structure |
abstract |
A structure and method of a semiconductor image sensor device that improves separation between pixels and double-sided mask alignment capability. A method of forming a backside illuminated image sensor 11 provides a region 27 of semiconductor material having a first major surface 271 and a second major surface 272 configured to receive incident light. Including doing. A pixel structure is formed in the region of semiconductor material adjacent to the first major surface. Thereafter, a trench structure 115 comprising a metal material is formed to extend through the region of semiconductor material. The first surface 1122 of the trench structure is adjacent to the first main surface of the region of semiconductor material, and the second surface 1121 is adjacent to the second main surface of the region of semiconductor material. The first contact structures 121 and 128 are electrically connected to one surface of the conductive trench structure, and the second contact structure 156 is electrically connected to the second surface on the opposite side. [Selection] Figure 17 |
priorityDate |
2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |