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filingDate 2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e006229896efaf97a78d7672a767c55
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publicationDate 2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017108109-A
titleOfInvention Semiconductor image sensor device and method of forming a structure
abstract A structure and method of a semiconductor image sensor device that improves separation between pixels and double-sided mask alignment capability. A method of forming a backside illuminated image sensor 11 provides a region 27 of semiconductor material having a first major surface 271 and a second major surface 272 configured to receive incident light. Including doing. A pixel structure is formed in the region of semiconductor material adjacent to the first major surface. Thereafter, a trench structure 115 comprising a metal material is formed to extend through the region of semiconductor material. The first surface 1122 of the trench structure is adjacent to the first main surface of the region of semiconductor material, and the second surface 1121 is adjacent to the second main surface of the region of semiconductor material. The first contact structures 121 and 128 are electrically connected to one surface of the conductive trench structure, and the second contact structure 156 is electrically connected to the second surface on the opposite side. [Selection] Figure 17
priorityDate 2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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