| abstract |
Provided is a CMP (chemical mechanical polishing) polishing liquid capable of suppressing an etching rate of a cobalt-containing part while maintaining a good polishing rate of the cobalt-containing part. An insulating material portion, a cobalt-containing portion, a titanium-containing portion that bonds the insulating material portion and the cobalt-containing portion, and the cobalt-containing portion is exposed on a surface to be polished. A CMP polishing liquid for polishing the surface to be polished of a substrate, which has a structural unit derived from the reaction of a monomer component containing at least methacrylic acid under the absence of an inorganic acid, and , Containing abrasive particles, a metal anticorrosive, and water. [Selection] Figure 2 |