http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017107620-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
filingDate 2015-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52a80007c9f97ed9f4cba2c0cbb7ec91
publicationDate 2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017107620-A
titleOfInvention Semiconductor device and nonvolatile memory
abstract A semiconductor device capable of dealing with an arbitrary variation is provided. A semiconductor device includes a plurality of memory cells including a memory cell that outputs first data according to a first storage state and a memory cell that outputs second data according to a second storage state. A first intermediate value determination circuit 12 that determines an intermediate value of the first data, a second intermediate value determination circuit 13 that determines intermediate values of the plurality of second data, a first intermediate value determination circuit 12, and a second intermediate value determination circuit Threshold value determination circuit 14 for determining a threshold value for identifying the first and second storage states based on the respective determination results of 13, determination result of threshold value determination circuit 14 and read result from a plurality of memory cells And an identification circuit 15 for identifying the storage states of the plurality of memory cells. [Selection] Figure 1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7288292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019053811-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11048571-B2
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