http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017105668-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bd0cdbc5c67cf4957ed83c89140748e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-02 |
filingDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06e042f982220c6a91c2bb9def8a5b5b |
publicationDate | 2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2017105668-A |
titleOfInvention | Method for growing CaMgZr-substituted gadolinium / gallium / garnet single crystal |
abstract | The present invention provides a method for growing a CaMgZr-substituted gadolinium / gallium / garnet single crystal and a gallium oxide powder capable of stably setting the lattice constant of the single crystal to a desired value by the Czochralski (CZ) method. A method of growing a CaMgZr-substituted gadolinium-gallium-garnet (SGGG) single crystal by heating and melting a mixture of raw material powders and then pulling up the seed crystal while rotating it by a CZ method. As the gallium oxide of the raw material powder, an SGGG single crystal in which an ignition loss (Ig-loss) component heated at 900 ° C. for 1 hour in an inert gas atmosphere containing oxygen is 0.16% by mass or less is used. Training method. [Selection figure] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017149613-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108531979-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114250515-A |
priorityDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.