| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_283b0c148f1ce389bdf4619d3016e748 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-366 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-245 |
| filingDate |
2016-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93ed48d6e04fcf05bd8f0ad722044202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29d02908814cc3c7a8d3bdabd1319581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b9553375890d455ef021d3c020dc495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2984191ace992c0d9f4053e1e52d1634 |
| publicationDate |
2017-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017095801-A |
| titleOfInvention |
Method for depositing a layer on a glass substrate by low pressure PECVD |
| abstract |
A method for obtaining a metal or semiconductor oxide, nitride or oxynitride layer by a low pressure PECVD process of 0.5 to 0.001 Torr while enabling a rapid deposition rate and minimizing the amount of contaminants. Provided. A method of manufacturing an oxide, nitride or oxynitride film of a metal or semiconductor by PECVD and includes the following steps. a) a low pressure PECVD apparatus comprising a linear dual beam plasma source comprising at least two electrodes connected to an AC or pulsed DC generator, b) a power density of 5-50 W per cm 2 of plasma, and c ) A precursor is applied to the substrate at a flow rate of less than 400 sccm per linear meter of the plasma source, and a reactive gas flow rate of 500 to 20000 sccm, provided that the ratio of the reactive gas flow rate to the precursor flow rate is at least 5 and the deposition rate is 400 nm Less than m / min [Selection] Fig. 1 |
| priorityDate |
2011-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |