http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017092274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ea93bfad3b1c9b25127e03527f890c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61ee8462ddc7cae93a2ec071aa800cb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fec09a6c9f773e4225641469279076ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b625557e06c4e775c8c694f54be6a076 |
| publicationDate | 2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017092274-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A semiconductor device having a resistance change element with high retention resistance in a low resistance (On) state while securing a memory window is provided. In a resistance change memory in which a selection transistor TR and a resistance change element RED1 connected in series to the selection transistor TR are arranged on a semiconductor substrate SUB, the resistance change element RED1 is brought into a high resistance (Off) state. A lower electrode E1 that applies a positive voltage at the time of transition, an upper electrode E2 that faces the lower electrode E1, and a resistance change layer RE made of an oxide of a transition metal sandwiched between the lower electrode E1 and the upper electrode E2. The The resistance change layer RE contains nitrogen, the nitrogen concentration on the lower electrode E1 side is higher than the nitrogen concentration on the upper electrode E2 side, and the nitrogen contained in the resistance change layer RE moves from the lower electrode E1 side to the upper electrode E2 side. It has a concentration gradient that decreases continuously toward it. [Selection] Figure 5 |
| priorityDate | 2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.