| abstract |
A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. An oxide semiconductor is formed over a first insulator, a second insulator is formed over the first insulator and the oxide semiconductor, and the first insulator is formed over the second insulator. A conductor is formed, an etching mask is formed over the first conductor, and the first conductor is etched using the etching mask as a mask, whereby a second conductor having a region overlapping with the oxide semiconductor is formed. This is a method for manufacturing a semiconductor device in which a heat treatment is performed after forming, removing an etching mask, and forming a hydrogen-containing layer over a second insulator and a second conductor. [Selection] Figure 1 |