| abstract |
The present invention provides a method of forming an epitaxial layer, including the step of introducing a carrier gas containing deuterium during the formation of the epitaxial layer by vapor deposition. Deuterium atoms are introduced into a silicon epitaxial film by a deuterium atmosphere. During gate oxide or device formation, deuterium atoms diffuse out into the interface and covalently bond with dangling bonds to form a stable structure. Therefore, the hot carrier effect can be prevented and the device characteristics can be enhanced. [Selection] Figure 1 |