http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017076146-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 2016-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b82192c6ec4bd1e0336a3d612e2de7e
publicationDate 2017-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017076146-A
titleOfInvention Photomask manufacturing method, photomask, pattern transfer method, and display device manufacturing method
abstract A photomask having a fine and highly accurate transfer pattern is manufactured. The method of manufacturing a photomask of the present invention includes a step of preparing a photomask blank in which a lower layer film, an intermediate film, an upper layer film, and a photoresist film are formed on a transparent substrate, and drawing on the photoresist film. And pre-developing to form a first resist pattern, etching the upper layer film using the first resist pattern as a mask, and further etching the intermediate film using the first resist pattern or the etched upper layer film as a mask A preliminary etching step, a step of forming a second resist pattern by performing additional development on the first resist pattern, a step of performing additional etching on the upper layer film using the second resist pattern as a mask, and And a post-etching step of etching the lower layer film using the etched intermediate film as a mask. [Selection] Figure 4
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priorityDate 2016-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 38.