http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017069521-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54063f3bf0907634a129e16c897d1717 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2015-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40e969e5027cd281c10a7c89e96d68fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e299c78d4aa0fab431c0f0fcfa3091 |
| publicationDate | 2017-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017069521-A |
| titleOfInvention | Semiconductor power module and moving body |
| abstract | In a semiconductor power module and a moving body, damage to an insulating substrate when a wiring and a lead on the insulating substrate are connected by ultrasonic connection is suppressed. In a lead 5 of a semiconductor power module, a connected portion 5a has a first region 5b located on the end portion 5e side and a second region 5c located on the bent portion 5d side. The first region 5 b in the connected portion 5 a is directly connected to the wiring pattern 3, and the second region 5 c is connected to the wiring pattern 3 through the Ni layer 11. Thus, since the Ni layer 11 is interposed between the second region 5c located on the bent portion 5d side and the wiring pattern 3, the insulating substrate below the bent portion 5d is applied when ultrasonic waves are applied during lead connection. The pressure applied to 2 can be alleviated, and the formation of damaged portions on the insulating substrate 2 can be reduced. [Selection] Figure 7 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023089714-A1 |
| priorityDate | 2015-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.