| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0291 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136277 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate |
2016-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e56ef877b2f4a7e0e119eda3b6ed61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54968803d5f05358c2b985c27b8ca076 |
| publicationDate |
2017-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017062496-A |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device having a capacitor with a high aperture ratio and capable of increasing a charge capacity is provided. Alternatively, a semiconductor device that achieves a narrow frame is provided. A transistor on a substrate; a first conductive film formed on the same surface as a gate electrode of the transistor; a second conductive film formed on the same surface as a pair of electrodes of the transistor; A first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film; The second conductive film is provided so as to overlap with the first conductive film with the gate insulating film of the transistor interposed therebetween. [Selection] Figure 1 |
| priorityDate |
2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |