Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_91a011ba27851a5c42afa823ea97fbf7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70fca54bb2ac71e6425b53d57b9f95fe |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2333-90206 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C12Q1-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C12Q1-006 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
filingDate |
2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daf96bffaac1b24aa9941ff1ac808f18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf128661bde7bca9b93de4a783e77760 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a973818ca714d5bde176197012ae1e6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6102cd2984d0b51f60d3702102057e16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_702f20f8ab521061af89e97fed5f030a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b36d588e2f952bc87b0f104d827c5af |
publicationDate |
2017-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2017058320-A |
titleOfInvention |
Biosensor and detection device |
abstract |
Provided are a biosensor and a detection device having high measurement sensitivity and capable of detecting a very small amount of a sensing target substance. A TFT biosensor 101 includes a gate electrode (silicon substrate 11) and an enzyme 19 fixed to an insulating substrate 18 spatially separated from a reference electrode 17. A reaction between the enzyme 19 and the sensing target substance 16 induces a pH change in the vicinity of the ion-sensitive insulating film 14. The TFT biosensor 101 can detect the concentration of the sensing target substance 16 with high sensitivity by detecting this pH change as a threshold voltage shift of the gate-source voltage versus the source-drain current characteristic. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7088541-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022004326-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020148487-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7257201-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019203819-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11639913-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7268411-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7334862-B2 |
priorityDate |
2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |