http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017036174-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25ba42e5f214f100f81e5e2016f045ce |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2015-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d8239a0738e57af715c15a866b16869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_554b0120fce4d1b2626f82d231edd8c5 |
| publicationDate | 2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017036174-A |
| titleOfInvention | Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate |
| abstract | An object of the present invention is to realize a group III nitride semiconductor layer having a low dislocation density. In order to solve the problem, according to the present invention, a flat surface with an exposed + C plane, and an inclined surface that is inclined from the flat surface and has a non- + C plane exposed in a plane orientation different from the + C plane are exposed. , A group III nitride semiconductor substrate having a growth surface comprising: [Selection] Figure 12 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437233-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11245054-B2 |
| priorityDate | 2015-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.