http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017022423-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec4a5f3b5b74f7867c60d9dc292aa58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b3f3fccd5487ad6d0903a7bb7eea7d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8897ff405aac18a1048238d62f50566 |
| publicationDate | 2017-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017022423-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a method for manufacturing an oxide semiconductor film in which oxygen ions are uniformly implanted. Further, a method for manufacturing a semiconductor device having favorable electric characteristics by using the oxide semiconductor film is provided. An oxide semiconductor film is formed over a substrate, and the maximum concentration distribution of an implant injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is the difference between the substrate and the oxide semiconductor film. A sacrificial film having a thickness for positioning in the region from the interface to the surface of the oxide semiconductor film is formed, and the maximum concentration distribution of the implant in the depth direction of the oxide semiconductor film is accelerated in the region. Oxygen ions, which are implants, are injected into the oxide semiconductor film through the sacrificial film with voltage, and then the sacrificial film is removed. In addition, a semiconductor device is manufactured using the oxide semiconductor film. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349033-B2 |
| priorityDate | 2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.