| abstract |
A light-emitting device with further improved light-emitting output is provided. A light-emitting device such as a UV-LED includes a sapphire substrate (PSS) 10 having a patterned surface, an AlN buffer layer 12 stacked on the PSS 10, and an undoped AlGaN layer stacked on the AlN buffer layer 12. 14 and AlGaN-based light emitting structures 16 to 26 stacked on the undoped AlGaN layer 14. The light emission intensity is increased by the combination of the PSS 10, the AlN buffer layer 12, and the undoped AlGaN 16. [Selection] Figure 1 |