| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2015-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f89cf3de44d48c2eb2654befcd951f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4188153274e5fbf3d506e52e008b35fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 |
| publicationDate |
2017-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017003960-A |
| titleOfInvention |
Resist underlayer film material and pattern forming method |
| abstract |
The present invention provides a resist underlayer film material having good embedding characteristics, less outgassing, and excellent dry etching resistance and heat resistance. One of a novolak resin having a repeating unit of a specific bisnaphthol derivative having a fluorine atom, a novolak resin having a repeating unit of a specific bisnaphthol derivative, and a bisnaphthol derivative represented by the general formula (3) or Resist underlayer film material containing both. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101775586-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7361499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019218337-A |
| priorityDate |
2015-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |