| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2014-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016541120-A |
| titleOfInvention |
UV-assisted photochemical vapor deposition for pore sealing of damaged low dielectric constant films |
| abstract |
Embodiments of the present invention generally provide a method for sealing a pore in a surface of a dielectric layer formed on a substrate. In one embodiment, the method includes forming a dielectric layer formed on a substrate with one compound represented by the general formula C x H y O, where x has a range of 1 to 15. Wherein y has a range from 2 to 22 and z has a range from 1 to 3, exposing the first pore sealant to the first seal layer on the dielectric layer; Exposing the substrate to UV radiation in an atmosphere of a first pore sealant to form. [Selection] Figure 4 |
| priorityDate |
2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |