http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016526797-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2014-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016526797-A |
| titleOfInvention | LED with stress relaxation layer under metallization layer |
| abstract | A semiconductor LED layer is epitaxially grown on the patterned surface of the sapphire substrate 10. The patterned surface enhances light extraction. The LED layer includes a p-type layer and an n-type layer. The LED layer is etched to expose the n-type layer. One or more first metal layers are patterned to form a p metal contact 32 and an n metal contact 33 in electrical contact with the p-type layer and the n-type layer. A dielectric polymer stress relaxation layer 36 is spin coated on the first metal layer to form a substantially planar surface on the first metal layer. The stress relaxation layer has an opening exposing the p metal contact and the n metal contact. Metal solder pads 44, 45 are formed on the stress relaxation layer and are in electrical contact with the p metal contact and the n metal contact through an opening in the stress relaxation layer. The stress relaxation layer acts as a buffer that accepts the difference in CTE between the solder pad and the underlying layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11024770-B2 |
| priorityDate | 2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.