| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2457-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-342 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016526286-A |
| titleOfInvention |
Direct and continuous formation of boron nitride and graphene on substrates |
| abstract |
The present invention generally relates to a method of forming a graphene layer directly on the surface of a substrate such as a silicon semiconductor. The graphene layer may be formed in direct contact with the surface of the substrate, or an intervening layer of material may be formed between the substrate surface and the graphene layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015183046-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017037820-A |
| priorityDate |
2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |