| abstract |
The present invention relates to a ferroelectric memory device including at least one layer containing a ferroelectric polymer and at least two electrodes on both sides of the layer, wherein the ferroelectric polymer has the general formula P (VDF-X -Y), where VDF is a vinylidene fluoride motif, X is a trifluoroethylene motif or tetrafluoroethylene motif, Y is a motif from a third monomer, and the Y motif in the polymer The present invention relates to a ferroelectric memory device having a molar ratio of 6.5% or less. |